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Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
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Cautions
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
HA16129AFPJ
Single Watchdog Timer
ADE-204-067 (Z) Rev. 0 Mar. 2001 Description
The HA16129AFPJ is a watchdog timer IC that monitors a microprocessor for runaway. In addition to the watchdog timer function, the HA16129AFPJ also provides a function for supplying a high-precision stabilized power supply to the microprocessor, a power on reset function, a power supply voltage monitoring function, and a fail-safe function that masks the microprocessor outputs if a runaway is detected.
Functions
* Watchdog timer (WDT) function Monitors the P-RUN signal output by the microprocessor, and issues an auto-reset (RES) signal if a microprocessor runaway is detected. * Stabilized power supply Provides power to the microprocessor. * Power on and clock off functions The power on function outputs a low level signal to the microprocessor for a fixed period when power is first applied. The clock off function outputs a RES signal to the microprocessor a fixed period after a runaway occurs. * Power supply monitoring function When the reference voltage (Vout) falls and becomes lower than the NMI detection voltage (4.63 V, Typ) or the STBY detection voltage (3.0 V Typ), this function outputs either an NMI signal or an STBY signal, respectively. Note that NMI detection can be set to monitor either V CC or Vout. * OUTE function*1 (fail-safe function) Outputs a signal used to mask microprocessor outputs when a microprocessor runaway has been detected. * RES delay function Sets the delay between the time the NMI signal is output and the time the RES signal is output. * Protection functions The HA16129AFPJ incorporates both Vout overvoltage prevention and short detection functions. Note: 1. OUTE function: OUTE is an abbreviation for output enable.
HA16129AFPJ
Features
* * * * * High-precision output voltage: 5.0 V 1.5% The WDT supports both frequency and duty detection schemes. High-precision power supply monitoring function: 4.625 V 0.125 V Built-in OUTE function All functions can be adjusted with external resistors and/or capacitors.
Pin Arrangement
P-RUN Rf Cf RR CR RT CRES GND Voadj OUTE
1 2 3 4 5 6 7 8 9 10 (Top view)
20 19 18 17 16 15 14 13 12 11
STBY STBYadj RES NMI NMIadj NMIsns VOUT CONT CS VCC
2
HA16129AFPJ
Block Diagram
To microprocessor (or other device) power supply connections
VCC
CS 11 12
CONT 13 14
VOUT
71k 31.2k STBYadj 19 36.8k 1.5V - +
3.3k Voadj 1.24V - + Short detection block Overvoltage detection block STBY 20 17 - + 1.18V NMI S STBY Q R RES SQ NMI detection block tON detection block - + R OUTE block 3.3k 10 OUTE 9
To Vout 15 NMIsns
STBY detection block
Regulator block
2k 80k
3.3k
NMIadj 16
70k
25k
RT 6 5 CR
QS R NMI
IR
19k 8.4k + - 20k
3.3k 18 RES
33k If*16 Cf 3 - + WDT block If/6 - - + IR*4/3
RES block
CRES + - 7
1 P-RUN IR 2V 8 4 2 If
Delay circuit block
GND
RR
Rf
Note: The current, voltage, and resistor values listed in the diagram are reference values. : Connect to Vout
3
HA16129AFPJ
Pin Function
Related Function WDT. Pin No. 1 2 3 t RH, t RL, tOFF 4 5 t ON 6 Symbol P-RUN Rf Cf RR CR RT Function Watchdog timer pulse input. The auto-reset function is controlled by the duty cycle or frequency of this input pulse signal. The resistor connected to this pin determines the current that flows in the Cf pin capacitor. Use the resistor value from 100 k to 500 k The current determined by the Rf pin charges the Cf capacitor and the potential on this pin determines the watchdog timer frequency band. The resistor connected to this pin determines the current that flows in the CR pin capacitor. Use the resistor value from 100 k to 500 k The current determined by the R R pin charges the capacitor CR and the potential on this pin controls the RES function (toff, t RH, and tRL). The resistor RT, which determines only the time t ON for the RES function is connected to this pin. This resistor determines the current that charges the capacitor C R for the time t ON . Use the resistor value from 100 k to 500 k The current determined by the Rf pin charges the capacitor C RES, and the RES delay times (Tr and TRES ) are determined by the potential of this capacitor. Ground Insert the resistor Roadj if fine adjustment of the regulator output voltage Vout is required. Leave this pin open if Vout does not need to be changed. Output for the OUTE function Power supply Connect the overcurrent detection resistor between the CS pin and the V CC pin. If this function is not used, short this pin to VCC. Also, connect this pin to the emitter of the external transistor. Connect this pin to the base of the external transistor. Provides the regulator output voltage and the IC internal power supply. Connect this pin to the collector of the external transistor. This pin senses the NMI detection voltage. If VCC is to be detected, connect this pin to the V CC pin (however, note that an external resistor is required), and if Vout is to be detected, connect this pin to the VOUT pin. Insert a resistor if fine adjustment of the NMI detection voltage is required. Leave this pin open if fine adjustment is not required. NMI output RES output Insert a resistor if fine adjustment of the S T B Y detection voltage is required. Leave this pin open if fine adjustment is not required. STBY output
tr, tRES
7
CRES
-- Vout Output Power supply Short detection Vout
8 9 10 11 12
GND Voadj OUTE VCC CS
13 14
CONT VOUT NMIsns
NMI
15
16 Output Output STBY Output 17 18 19 20
NMIadj NMI RES STBYadj STBY
4
HA16129AFPJ
Functional Description
This section describes the functions provided by the HA16129FPJ. See the section on formulas for details on adjustment methods. Regulator Block Vout Voltage This IC provides a stabilized 5 V power supply by controlling the base current of an external transistor. The largest current (the maximum CONT pin current) that can be drawn by the base of this external transistor is 20 mA. Also note that the Vout output is also used for the power supply for this IC's internal circuits. Short Detection Block When a current detection resistor (R CS) is connected between the VCC pin and the CS pin, and the voltage between these pins exceeds the VCS voltage (700 mV Typ), the CONT pin function turns off and the output voltage supply is stopped. Output Voltage (Vout) Adjustment The output voltage can be adjusted by connecting an external resistor at the output voltage adjustment pin (Voadj). However, if for some reason the voltage on this Vout line increases and exceeds the voltage adjustment range (7 V Max), the CONT pin function turns off and the output voltage supply is stopped. Refer to the timing charts in conjunction with the following items. LVI (Low Voltage Inhibit) NMI Detection Voltage This function monitors for drops in the power-supply voltage. This function can be set up to monitor either VCC or Vout. When Vout is monitored, a low level is output from the NMI pin if that voltage falls under the detection voltage (4.63 V Typ). Then, when the power-supply voltage that fell rises again, the NMI pin will output a high level. Note that this function has a fixed hysteresis of 50 mV (Typ). The monitored power supply is selected by connecting the NMIsns pin either to the VCC pin or to the V OUT pin. When detecting VCC, an external adjustment resistor is required.) The detection voltage can also be adjusted with the NMIadj pin. STBY Detection Voltage This function monitors for drops in the Vout voltage. It monitors the Vout voltage, and outputs a low level from the STBY pin if that voltage drops below the detection voltage (3.0 V Typ). Then, when the powersupply voltage that fell rises again, the STBY pin will output a high level. Note that this function has a fixed hysteresis of 1.35 V (Typ). The detection voltage can also be adjusted with the STBYadj pin.
5
HA16129AFPJ
Function Start Voltage This is the minimum required Vout voltage for the RES, NMI, STBY, and OUTE output pin functions to start operating. It is stipulated as the voltage that Vout must reach after power is first applied for these pins to output a low level. Hysteresis This is the difference between the LVI function detection voltage when the power-supply voltage drops, and the clear (reset) voltage when the power-supply voltage rises.
(VHYSN = VNMI' - V NMI; VHYSS = VSTBY' - V STBY)
OUTE Function When a microprocessor is in the runaway state, its outputs are undefined, and thus it is possible that the outputs may be driven by incorrect signals. This function is used to mask such incorrect microprocessor outputs. When the WDT function recognizes normal operation (when the RES output is high), the OUTE output will be held high. When the WDT function recognizes an abnormal state and an auto-reset pulse is output from the RES pin, the OUTE output will be held low. Thus microprocessor outputs during microprocessor runaway can be masked by taking the AND of those outputs and this signal using external AND gates. The OUTE output will go high when the CR pin voltage exceeds VthHcr2, and will go low when that voltage falls below VthLcr. There are limitation that apply when the OUTE function is used. Refer to the calculation formulas item for details. RES Function tRH This period is the length of the high-level output period of the RES pulse when the P-RUN signal from the microprocessor stops. This is the time required for the CR potential to reach VthLcr from VthHcr1. tRL This period is the length of the low-level output period of the RES pulse when the P-RUN signal from the microprocessor stops. This is the time required for the CR potential to reach VthHcr1 from VthLcr. tOFF This is the time from the point the P-RUN signal from the microprocessor stops to the point a low level is output from the RES pin. During normal microprocessor operation, the potential on the CR pin will be about Vout - 0.2 V (although this value may change with the P-RUN signal input conditions, so it should be verified in the actual application circuit) and tOFF is the time for the CR pin potential to reach VthLcr from that potential.
6
HA16129AFPJ
tON tON is the time from the point the NMI output goes high when power is first applied to the point the RES output goes low. t ON is the time for the potential of the CR pin to reach VthHcr1 from 0 V. tr The time tr is the fixed delay time between the point the NMI output goes from low to high after the powersupply voltage comes up to the point RES goes from low to high. The time tr is the time for the CRES pin potential to fall from the high voltage (about 1.9 V) to Vthcres. tRES The time tRES is the fixed delay time between the point the NMI output goes from high to low when the power-supply voltage falls to the point RES goes from high to low. The time tRES is the time for the CRES pin potential to rise from 0 V to Vthcres. WDT Function This function determines whether the microprocessor is operating normally or has entered a runaway state by monitoring the duty or frequency of the P-RUN signal. When this function recognizes a runaway state, it outputs a reset pulse from the RES pin and sets the OUTE pin to low from high. It holds the RES and OUTE pins fixed at high as long as it recognizes normal microprocessor operation. In this function, the potential of the Cf capacitor is controlled by the P-RUN signal. This Cf pin potential charges the capacitor CR that controls the reset pulse to be between VthLcf and VthHcf. The judgment as to whether or not the microprocessor is operating normally, is determined by the balance between the charge and discharge voltage on the capacitor CR at this time.
7
HA16129AFPJ
Calculation Formulas
Item Reference voltage Formula Vout = 1.225 1 + R1, R2; k Notes While the Vout voltage will be 5 V 1.5% when the Voadj pin is open, the circuit shown here should be used to change the Vout voltage externally.
(
37 // R1 12 // R2
(
VCC
CS
Vout Voadj
R1 R2
Short detection voltage
VCS (700 mV Typ) < IL RCS
When this function operates, the base current to the external transistor connected to the CS pin stops and the Vout output is lowered.
RCS IL
VCC
CS
Vout
OVP
--
This function prevents the microprocessor from being damaged if the Vout voltage is inadvertently increased to too high a level. The OVP detection voltage is fixed. These determine the reset pulse frequency and duty.
t RH, t RL
tRH = 3.3 x CR RR tRL = 1.1 x CR RR
tRL RES tRH
t ON
tON = 1.1 x CR RT
Sets the time from the rise of the NMI signal to the point the RES output is cleared.
NMI tON
RES
t OFF
tOFF = 6.5 x CR RR
Sets the time from the point the P-RUN pulse stops to the point a reset pulse is output.
P-RUN
RES
toff
8
HA16129AFPJ
Calculation Formulas (cont)
Item VSTBY Formula
VSTBY = 1.48 x
Notes
( 29.5 +67.6 // R1 + 1( 36.2
The voltage at which the STBY signal is output when Vout falls. The STBY detection voltage can be adjusted by connecting a resistor between the STBYadj pin and ground (R3). However, the STBY recovery voltage cannot be adjusted.
Vout Vout VSTBY STBYadj R1 STBY STBY t VSTBY'
VNMI (Vout detection)
VNMI = 1.2 x 1 + R1, R2; k
(
R1 // 73 R2 // 25
(
The voltage at which the NMI signal is output when Vout falls. (When NMIsns is connected to Vout.) The N M I detection voltage can be adjusted by connecting resistors between the NMIadj pin and Vout (R1), and between the NMIadj pin and ground (R2).
Vout NMIsns R2 NMIadj R1 GND VNMI' VNMI
NMI Vout
NMI t
VNMI (VCC detection)
VNMI = 4.62 x
( R2 R197.1 + 1( // ( (
The voltage at which the NMI signal is output when VCC falls. (When NMIsns is connected to VCC.) The N M I detection voltage can be adjusted by connecting resistors between the NMIsns pin and V CC (R1), and between the NMIsns pin and ground (R2).
Recovery voltage R1 VNMI = 4.68 x +1 R2 // 45.5 R1, R2; k
R1 NMIsns R2
VCC CS
Vout NMI VCC VNMI
VNMI'
NMI GND t
OUTE
CR x RR > 19.3 x Cf x Rf
If the OUTE function is used, the relationship shown at the left must be fulfilled to assure that pulses are not incorrectly generated in this output when a microprocessor runaway state is detected.
9
HA16129AFPJ
Calculation Formulas (cont)
Item WDT. Formula 0.31 x (Du - 24) Cf Rf fLine2 = 24% (fixed) 0.024 fLine3 = Cf Rf fLine4 = 99% fLine1 = The relationship between fLine1 and fLine3 fLine1 = fLine3 x 12.9 (Du - 24) Du: The P-RUN signal duty cycle
tH tL t Du = H x 100 tH + tL Frequency Normal operation area fLine2 fLine3 fLine4 fLine1
Notes The WDT function judges whether the P-RUN pulse signal is normal or not. If the WDT function judges the P-RUN pulse signal to be abnormal, it outputs a reset signal. The normal range is the area enclosed by f Line1 to f Line4 in the figure.
Duty
10
HA16129AFPJ
Timing Charts
Whole system timing chart
VCC
VOUT
VSTBY'
VNMI
VNMI' VSTBY
STBY
NMI
RES
tON
tRL tRH
tRES tr
tRES
OUTE
tOFF
P-RUN
Microprocessor runaway
11
HA16129AFPJ
WDT. timing chart
(5 V) Normal operation High-frequency runaway Low-frequency runaway
VOUT
P-RUN VthHcf Cf VthLcf VthHcr2
CR VthHcr1 VthLcr RES
tOFF
tRL
tRH OUTE
LVI timing chart
VCC VNMI' VSTBY' VOUT VNMI VSTBY
STBY
NMI
CR
tr
RES & OUTE CRES
tON
tRES Vthcres
12
HA16129AFPJ
Absolute Maximum Ratings (Ta = 25C)
Item Power supply voltage CS pin voltage CONT pin current CONT pin voltage Vout pin voltage P-RUN pin voltage NMIsns pin voltage NMI pin voltage STBY pin voltage RES pin voltage OUTE pin voltage Power dissipation
*1
Symbol VCC VCS Icont Vcont Vout VPRUN VNMIsns VNMI VSTBY VRES VOUTE PT Topr Tstg
Rating 40 VCC 20 VCC 12 Vout VCC Vout Vout Vout Vout 400 -40 to +85 -50 to +125
Unit V V mA V V V V V V V V mW C C
Operating temperature Storage temperature Note:
1. This is the allowable value when mounted on a 40 x 40 x 1.6 mm glass-epoxy printed circuit board with a mounting density of 10% at ambient temperatures up to Ta = 77C. This value must be derated by 8.3 mW/C above that temperature. Power Dissipation PT (mW) 400 300 200 100 0 -40 85C -20 0 20 40 60 80 100 120 140 Ambient Temperature Ta (C) 77C
13
HA16129AFPJ
Electrical Characteristics (Ta = 25C, VCC = 12V, Vout = 5.0V, Rf = RR = 180k, Cf = 3300pF, CR = 0.1F, RT = 390k, CRES = 1500pF, RCS = 0.2)
Item Power supply current Short detection voltage Symbol I CC VCS Min 400 Typ 10 700 Max 15 900 Unit mA mV VCS = (VCC pin voltage - CS pin voltage) VCC = 12V, Icont = 5mA VCC = 6 to 17.5V, Icont = 10mA Icont = 0.1 to 15mA Vi = 0.5Vrms, fi = 1kHz Test conditions
Regulator Output voltage block
Vout
4.925 -30
5.00
5.075 30
V mV
Input voltage stabilization Volin
Load current stabilization Voload Ripple exclusion ratio Output voltage temperature coefficient Output voltage adjustment range P-RUN Input high-level voltage input block Input low-level voltage Input high-level current Input low-level current NMI output High level block Low level Function start voltage STBY output block High level RREJ
-30 (45)
75 40 300 0
30 (200) 7.0 0.8 500 5
mV dB
| Vout/T | VoMAX ViH ViL I iH I iL VOHN VOLN VSTN VOHS 2.0 -5
ppm/C Icont = 5mA V V V A A ViH = 5.0V ViL = 0.0V I OHN = 0mA I OLN = 2.0mA
Vout - 0.2 Vout 0.7
Vout + 0.2 V 0.4 1.4 V V
Vout - 0.2 Vout
Vout + 0.2 V
I OHS = 0mA
Low level Function start voltage
VOLS VSTS

0.7
0.4 1.4
V V
I OLS = 2.0mA
Note: Values in parentheses are design reference values.
14
HA16129AFPJ
Electrical Characteristics (Ta = 25C, VCC = 12V, Vout = 5.0V, Rf = RR = 180k, Cf = 3300pF, CR = 0.1F, RT = 390k, CRES = 1500pF, RCS = 0.2) (cont)
Item RES output block High level Symbol VOHR Min Typ Max Unit Test conditions I OHR = 0mA
Vout - 0.2 Vout
Vout + 0.2 V
Low level Function start voltage OUTE output block High level
VOLR VSTR VOHE

0.7
0.4 1.4
V V
I OLR = 2.0mA
Vout - 0.2 Vout
Vout + 0.2 V
I OHE = 0mA
Low level Function start voltage RES function Power on time Clock off time Reset pulse high time Reset pulse low time LVI function NMI function (Vout detection) Detection voltage 1
VOLE VSTE ton toff t RH t RL VNMI1
25 80 40 15 4.5
0.7 40 130 60 20 4.63
0.4 1.4 60 190 90 30 4.75
V V ms ms ms ms V
I OLE = 2.0mA
Hysteresis 1 VHYSN1
50 100 5.4
100 (400) 5.7
mV ppm/C V R1 = 13k, R2 = 390k
Temperature | VNMI/T | coefficient NMI function (VCC detection) Detection voltage 2 VNMI2 5.0
Hysteresis 2 VHYSN2 STBY function Detection voltage Hysteresis VSTBY VHYSS
0.5 2.70 1.20
0.8 3.00 1.35 100 200 200
1.3 3.30 1.50 (400) (300) (300)
V V V ppm/C s s
R1 = 13k, R2 = 390k
Temperature | VSTBY/T | coefficient RES Disable time delay time Recovery time t RES tr (100) (100)
Note: Values in parentheses are design reference values.
15
HA16129AFPJ
Test Circuits
* Vout test circuit
Icont A VCC STBY NMI RES Voadj P-RUN Rf NMIadj Cf RR CR RT GND CRES Here, the Vout voltage is for a VCC of 12V, and Icont is monitored as Vout is varied. HA16129AFPJ NMIsns VCC CS CONT Vout STBYadj Units: Resistors Capacitors F Vout
f = 1kHz duty = 50%
180k
3300p 180k
0.1
390k
1500p
* ICC test circuit
IIN VCC STBY NMI RES Voadj P-RUN Rf NMIadj Cf RR CR RT GND CRES HA16129AFPJ NMIsns VCC CS CONT Vout STBYadj *ICC = IIN + Iout Iout Vout
f = 1kHz duty = 50%
180k
3300p 180k
0.1
390k
1500p
* Test circuit for other parameters
VCC STBY NMI RES HA16129AFPJ NMIsns NMIadj Cf RR CR RT GND CRES VCC CS CONT Vout STBYadj
NMI Vout detection R1 13k NMI VCC detection R2 390k
V
Frequency counter
Voadj P-RUN Rf f = 1kHz duty = 50% 180k
3300p 180k
0.1
390k
1500p
16
HA16129AFPJ
System Circuit Examples
* Example of a basic system
1 180k 2 3300p 3 180k 4 0.1 390k 1500p 5 6 7 8 9
P-RUN Rf Cf
STBY 20 STBYadj 19 RES 18
STBY
RES NMI VCC
HA16129AFPJ
RR CR RT CRES GND Voadj
NMI 17 NMIadj 16 NMIsns 15
(5 V) VOUT 14 CONT 13 CS 12 VCC 11 DS 0.2
+ +
Microprocessor
PORT To other power supplies
PORT
200
10 OUTE
BATTERY
* Example of a system using a backup circuit and a primary voltage monitoring circuit
1 180k 2 3300p 3 180k 4 0.1 390k 1500p 5 6 7 8 9
P-RUN Rf Cf
STBY 20 STBYadj 19 RES 18
STBY
RES NMI
HA16129AFPJ
RR CR RT CRES GND Voadj
NMI 17 NMIadj 16 NMIsns 15 VOUT 14 CONT 13 CS 12 VCC 11
+
VCC PORT R2 Q1 (5V) R4 R1 R3 Q2 D1 To other power supplies
200 0.2
Microprocessor
PORT
10 OUTE
Primary detection
+
IGN R5 SW. BATTERY
DZ Backup circuit DS: Schottky diode DZ: Zener diode
DS
Load
Load
IGN SW.
17
HA16129AFPJ
Operating Waveforms
Frequency vs. Duty Characteristics 100k Ta = 25C, CR = 0.1F, RR = 180k, RT = 390k, Rf = 180k, Cf = 3300pF CRES = 1500pF Runaway area RES and OUTE runaway detection lines
10k
OUTE normal recovery line
Frequency (Hz)
Normal area 1k RES OUTE Pulse generator VOH: 5V VOL: 0V Monitor
100
10 20
30
40
50
60 Duty (%)
70
80
90
100
Power On Time (tON) vs. RT Resistance Characteristics 1000 500 Ta = 25C, VCC = 0 12V, Rf = 180k, Cf = 3300pF, CRES = 1500pF
CR = 0.47F
Power On Time (tON) (ms)
100 50 CR = 0.1F
10 5
CR = 0.033F
1 10
50
100
500
1000
RT Resistance (k)
18
HA16129AFPJ
Clock Off Time (toff) vs. RR Resistance Characteristics 1000 Ta = 25C, Rf = 180k, Cf = 3300pF, CRES = 1500pF, RT = 390k
CR = 0.47F
500
Clock Off Time (toff) (ms)
CR = 0.1F
100
50
CR = 0.033F
10 10
50
100
500
1000
RR Resistance (k)
Reset Pulse High Time (tRH) vs. RR Resistance Characteristics Ta = 25C, Rf = 180k, Cf = 3300pF, RT = 390k, CRES = 1500pF
1000 500 Reset Pulse High Time (tRH) (ms)
CR = 0.47F
CR = 0.1F 100 50 CR = 0.033F 10 5
1 10
50
100
500
1000
RR Resistance (k)
19
HA16129AFPJ
Reset Pulse Low Time (tRL) vs. RR Resistance Characteristics 1000 500 Ta = 25C, Rf = 180k, Cf = 3300pF, RT = 390k, CRES = 1500pF CR = 0.47F
Reset Pulse Low Time (tRL) (ms)
100 50
CR = 0.1F
10 5
CR = 0.033F
1 10
50
100
500
1000
RR Resistance (k)
RES Delay Time and Recovery Time (tr) vs. Rf Resistance Characteristics 10000 5000 RES Delay Time and Recovery Time (tr) (s) Ta = 25C, Cf = 3300pF, RR = 180k, RT = 390k, CR = 0.1F CRES = 0.01F
1000 500
CRES = 1500pF
100 CRES = 560pF 50
10 10
50
100
500
1000
Rf Resistance (k)
20
HA16129AFPJ
RES Delay Time and Disable Time (tRES) vs. Rf Resistance Characteristics 10000 5000 RES Delay Time and Disable Time (tRES) (s) Ta = 25C, Cf = 3300pF, RR = 180k, CR = 0.1F, RT = 390k CRES = 0.01F
1000 CRES = 1500pF 500
100 50
CRES = 560pF
10 10
50
100
500
1000
Rf Resistance (k)
Output Voltage vs. Roadj Resistance (to Ground) Characteristics 6.0 Ta = 25C, VCC = 12V, Cf = 3300pF, Rf = 180k, CR = 0.1F, RR = 180k, RT = 390k, CRES = 1500pF
5.8
5.6 Output Voltage (V) VCC 5.4 Vout Voadj V Roadj
5.2
5.0
4.8
100
500
1000
5000
*
Roadj Resistance (to Ground) (k)
21
HA16129AFPJ
Output Voltage vs. Roadj Resistance (to Vout) Characteristics 5.0 Ta = 25C, VCC = 12V, Cf = 3300pF, Rf = 180k, CR = 0.1F, RR = 180k, RT = 390k, CRES = 1500pF
4.8
Output Voltage Vout (V)
4.6
4.4
4.2
VCC
Vout Voadj
V Roadj
4.0
3.8
100 k
500 k
1M
5M
10 M
Roadj Resistance (to Vout) (k)
ICONT Current vs. Vout Voltage Characteristics 40 Ta = 25C, Cf = 3300pF, Rf = 180k, CR = 0.1F, RR = 180k, RT = 390k, CRES = 1500pF
30
ICONT Current (A)
20
10
0 4.92
4.94
4.96 4.98 Vout Voltage (V) ICONT A
5.00
5.02
Vout
Vout CONT
CS
VCC
VCC 12 V
Vout Voltage (V)
22
HA16129AFPJ
Package Dimensions
Unit: mm
12.6 13 Max
20
11
1
10
5.5
0.80 Max
2.20 Max
*0.22 0.05 0.20 0.04
0.20 7.80 + 0.30 -
1.15
0 - 8
0.70 0.20
1.27 *0.42 0.08 0.40 0.06
0.12 M
*Dimension including the plating thickness Base material dimension
0.10 0.10
0.15
Hitachi Code JEDEC EIAJ Mass (reference value)
FP-20DA -- Conforms 0.31 g
23
HA16129AFPJ
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica Europe Asia Japan
: : : :
http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk
For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00
Copyright (c) Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 3.0
24


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